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Pegasus represents a market leading Deep Reactive Ion Etch (DRIE) processing system, providing production customers the fastest etch rates with exacting feature profile control and excellent uniformity for substrate sizes up to 200mm, in applications requiring deep anisotropic etching. This combination of benefits further reduces the manufacturing cost in volume applications such as MEMS and Advanced Packaging concepts in silicon using STS’ ASE® processing technology.

 

As applications move from R&D to full-scale production, manufacturers are moving towards larger wafer formats. Pegasus improves device yields on larger wafer sizes up to 200mm by increasing etch uniformity and reducing trench tilting artifacts typically observed in conventional de-coupled plasma source designs.

 

This latest DRIE source design incorporates a revolutionary geometry that provides a highly uniform plasma over a much larger area compared with traditional decoupled plasma sources and achieves a higher mask selectivity and a reduction in ion related feature damage.

 

A normal effect of the ‘Bosch process’ is sidewall scallops. The sidewall roughness, or effective size of the scallop, can be improved by positioning fast switching MFCs close to the process chamber. This comes as standard on Pegasus. Also standard are the Boost and Delay software control that incorporates the patented Parameter Ramping feature and the patented Silicon on Insulator (SOI) technology. The combination delivers an extremely flexible system.