The ICP process module delivers a high density plasma using a conventional radial ICP coil design. This coupled with our patented balanced feed technology ensures a uniform plasma with no localized sputtering of the chamber ceramic as seen in tools manufactured by other ICP suppliers.

Through the use of a low-pressure operating window, anisotropic profiles can be achieved. The control of ion bombardment at the wafer surface by varying the bias power ensures low damage, controllable etch processes.