PECVD uses a plasma to enhance the chemical reaction rates of the precursors, which allows deposition of thin films at lower temperatures (typically <350°C) than conventional chemical vapor deposition (CVD) systems, allowing use in III-V compound semiconductor device manufacture.

The system is compatible with silane and TEOS process chemistries and can be configured for sequential deposition/etch processes for planarization, sequential deposition of different films and the introduction of various dopants for oxide layers.  An optional Liquid Delivery System (LDS) is available for the delivery of up to 5 low vapor pressure precursors.