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One of the main applications of XeF₂ etching is the release of MEMS structures using a sacrificial silicon release layer.

 

XeF₂ is a fast isotropic etchant of silicon, without plasma excitation, and has a high selectivity for silicon compared with a vast array of other materials commonly used in CMOS and other semiconductor applications.

 

As a dry process, XeF₂ etching eliminates device damage caused by agitation or stiction, often associated with wet etching. Together with low or non-existent attack on other semiconductor materials, the process results in increased yield, lower fabrication costs and higher performance devices.

 

Previously, in order to improve cross-wafer uniformity it was necessary to lower gas pressures and flows, or introduce a carrier gas. Lower gas pressures and flows reduce etch rates and throughput, while carrier gasses reduce efficiency and significantly increase operating costs. This new chamber design encapsulates the wafer in a smaller, symmetrical chamber which results in a very uniform and highly concentrated flow of gas over the wafer.

 

By combining the expertise of both companies, we have succeeded in developing a unique XeF₂ process tool which offers customers significant competitive advantages for volume production applications.